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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2002.10.24 Page No. : 1/3 HBAT54\A\C\S Description Silicon Schottky Barrier Double Diodes Features These diodes feature very low turn-on voltage and fast switching. There is a PN junction guard ring against excessive voltage such as electronics attic discharges protects these devices. SOT-23 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature .............................................................................................. -65~+125 C Junction Temperature .................................................................................................... +125 C * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 230 mW * Maximum Voltages and Currents (Ta=25C) Repetitive Peak Reverse Voltage ........................................................................................ 30 V Forward Continuous Current .......................................................................................... 200 mA Repetitive Peak Forward Current .................................................................................. 300 mA Surge Forward Current (tp<1s)....................................................................................... 600 mA Characteristics (Ta=25C) Characteristic Reverse breakdown Voltage Symbol V(BR)R VF(1) VF(2) VF(3) VF(4) VF(5) IR CT Trr Condition IR=10uA IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz IF=IR=10mA RL=100 measured at IR=1mA Min. 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV uA pF nS Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Forward Current & Forward Voltage 250 Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2002.10.24 Page No. : 2/3 Diode Capacitance & Reverse-Biased Voltage 100 200 150 Diode Capacitance-Cd (pF) 0 200 400 600 800 1000 Forward Current-IF (mA) 10 100 50 0 1 0.1 1 10 100 Forward Voltage-VF (mV) Reverse Biased Voltage-VR (V) HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification |
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